发明名称 |
A THERMAL CONDUCTING TRENCH IN A SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME |
摘要 |
<p>The invention relates to a method of forming a trench filled with a thermally conducting material in a semiconductor substrate. In one embodiment, the method includes filling a portion of the trench with a thermally conducting material and patterning a contact to the thermally conducting material. The invention also relates to a semiconductor device. In one embodiment, the semiconductor device has a trench defining a cell region, wherein a portion of the trench includes a thermally conducting material, and a contact to the thermally conducting material. The invention further relates to a semiconductor device and a method of forming a semiconductor device with an interlayer dielectric that is a thermally conducting material.</p> |
申请公布号 |
EP0983612(A1) |
申请公布日期 |
2000.03.08 |
申请号 |
EP19980913144 |
申请日期 |
1998.03.25 |
申请人 |
INTEL CORPORATION |
发明人 |
LIANG, CHUNLIN;DOYLE, BRIAN, S. |
分类号 |
H01L21/762;H01L21/763;H01L23/367;H01L29/10;H01L29/417;H01L29/78;(IPC1-7):H01L27/108;H01L27/095;H01L29/68 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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