| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion unit and a photovoltaic power generation device which use an amorphous Si semiconductor film with high quality and high optical stability and have a high efficiency and a low light-degradation ratio. <P>SOLUTION: This photoelectric transducer is equipped with a semiconductor multilayer film containing a semiconductor thin film made of amorphous silicon as a photoactivation region. The amorphous silicon contains at least silicon and hydrogen, and the ratio of the scattering peak intensity I<SB>TA</SB>in the TA mode to the scattering peak intensity I<SB>TO</SB>in the TO mode, which is obtained from the Raman scattering spectrum, is 0.35 or less. In addition, the open circuit voltage obtained after the semiconductor multilayer film is subjected to a light irradiation treatment by using simulated sunlight under conditions (a light irradiation intensity of 100 mW/cm<SP>2</SP>, a light irradiation time of 200 hours, and T±2°C (T: 40-50°C)) is higher than the open circuit voltage obtained before the light irradiation treatment. Thus, a photoelectric conversion unit and a photovoltaic power generation device, which have a high efficiency and a substantially reduced light-degradation ratio and are typified by a solar cell, can be provided. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
