发明名称 |
NONVOLATILE SEMICONDUCTOR MEMORY |
摘要 |
<p>A plurality of sectors are formed. Each sector has nonvolatile memory cells, local bit lines connected thereto, and a switch circuit. Write global bit lines and read global bit lines are wired in such a manner that they are common to the sectors. The write global bit lines transfer data to be written into the memory cells or transfer Verify Data from the memory cells. The read global bit lines transfer data read from the memory cells. The switch circuit connects the local bit lines to the write or read global bit lines in accordance with an operation mode. Accordingly, a read operation can be executed during execution of a write sequence or an erase sequence. That is, a dual operation can be executed.</p> |
申请公布号 |
WO2005017909(A1) |
申请公布日期 |
2005.02.24 |
申请号 |
WO2003JP10413 |
申请日期 |
2003.08.18 |
申请人 |
FUJITSU LIMITED;IIOKA, OSAMU;MAWATARI, HIROSHI |
发明人 |
IIOKA, OSAMU;MAWATARI, HIROSHI |
分类号 |
G11C16/02;G11C16/06;(IPC1-7):G11C16/02 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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