发明名称 |
SEMICONDUCTOR DEVICES ON MISORIENTED SUBSTRATES |
摘要 |
A semiconductor device (100) includes a misoriented substrate (240) having a surface area inclined in a range of about 8 to 40 degrees from the {100} plane. At least one highly doped P-type semiconductor layer (106) of a first semiconductor material doped with Carbon (C) is grown over the surface area. At least one highly doped N-type semiconductor layer (104) of a second semiconductor material is grown over the surface area and near the at least one highly doped P-type semiconductor layer (106). A moderately doped P-type layer (60) is grown over the surface area, wherein the moderately doped P-type layer 60 has a third semiconductor material doped with a dopant selected as a member from the group consisting of Zn, Be, Cd and Mg. The devices 100 include VCSELs having tunnel junctions (110) and semiconductor DBRs (230) composed of AlGaInAs/InP or GaInAs/InP layers (2308/2302) on misoriented substrates 240.
|
申请公布号 |
WO2006058040(A3) |
申请公布日期 |
2006.10.05 |
申请号 |
WO2005US42390 |
申请日期 |
2005.11.21 |
申请人 |
CORNING INCORPORATED;CANEAU, CATHERINE G;NISHIYAMA, NOBUHIKO;GURYANOV, GEORGIY |
发明人 |
CANEAU, CATHERINE G;NISHIYAMA, NOBUHIKO;GURYANOV, GEORGIY |
分类号 |
H01L29/06;H01L29/15;H01L29/205;H01L31/12;H01L33/02;H01L33/16;H01S5/183;H01S5/30;H01S5/323 |
主分类号 |
H01L29/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|