| 摘要 |
PROBLEM TO BE SOLVED: To prevent a temperature of an object to be treated in the case of irradiation from being raised each time of the irradiation, in a crystallization process of a semiconductor thin film which forms an irradiation region overlapped partially by using two or more laser oscillators of different oscillation wavelengths, and which performs the next irradiation so as to overlap with a part of the irradiation region. SOLUTION: The irradiation intensity of a first laser beam is set to be distributed unevenly in a relative moving direction where irradiation distribution is provided so that the intensity of the first laser beam may be larger on a downstream side than on an upstream side in the relative moving direction of a mask regarding the moving direction of the irradiation region made by the first laser beam and a second laser beam. COPYRIGHT: (C)2007,JPO&INPIT
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