| 摘要 |
PROBLEM TO BE SOLVED: To reduce the size of a nonvolatile memory cell. SOLUTION: A nonvolatile semiconductor memory has a substrate 1 having stripe-like trenches 50, each first electrode 10 buried in the bottom of each trench 50, each second electrode 20 covering the surface of the substrate interposed between the adjacent first electrodes to each other, each diffusion layer 40 served as each source or each drain, and each trap film 30 served as a charge accumulating layer. Each diffusion layer 40 is formed only under the bottom surface of each trench 50, or is formed only under the surface of the substrate present in each RI interposed between the trenches. Each trap film 30 is formed between either one of the electrodes opposed to each diffusion layer 40 and the side surface of each trench 50. COPYRIGHT: (C)2007,JPO&INPIT
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