| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure for integrally forming a circuit for which high-speed operation and low-voltage operation are required and a circuit for which sufficient reliability is required at the time of high voltage application in a circuit group provided in a semiconductor device, and to provide a manufacturing method thereof. SOLUTION: The semiconductor device is equipped with a plurality of kinds of transistors which include single-crystal semiconductor layers with different thicknesses, which are separated from a single-crystal semiconductor substrate and bonded, over one substrate. The single-crystal semiconductor layer of a transistor for which high-speed operation is required is formed thinner than that of a transistor for which high resistance to a voltage is required, so that the thickness of the single-crystal semiconductor layer is made thin. COPYRIGHT: (C)2009,JPO&INPIT |
