| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, which is capable of preventing cracks of an IC chip by improving the uniformity of surface pressure exerted on a rear side of the IC chip during face down bonding, and to provide the semiconductor device. <P>SOLUTION: The manufacturing method includes: a step of disposing a resin layer 20 between a front side 10a of an IC chip 10 and a wiring board 30 in a state wherein the front side 10a of the IC chip 10 and a surface having a wiring pattern 31 of the wiring board 30 face each other, and disposing a plate 50 covering all of a rear side 10b of the IC chip, between a bonding head 40 and the rear side 10b of the IC chip; and a step of bonding a bump electrode 3 to the wiring pattern 31 by pressing the plate 50 toward the wiring board 30 by the bonding head 40. Thus force applied from the bonding head 40 to the plate 50 can be uniformly transmitted to all the rear side 10b of the IC chip 10. <P>COPYRIGHT: (C)2010,JPO&INPIT |
