Integrated circuit device with well controlled surface proximity and method of manufacturing same

摘要

An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed method provides improved control over a surface proximity and tip depth of integrated circuit device. In an embodiment, the method achieves improved control by forming a doped region and a lightly doped source and drain (LDD) region in a source and drain region of the device. The doped region is implanted with a dopant type opposite the LDD region.

主权项

1. A method comprising:
forming a gate structure over a substrate; performing a first implantation process with a first dopant on the substrate, thereby forming a first doped region; performing a second implantation process with a second dopant on the substrate, the second dopant being opposite the first dopant, thereby forming a second doped region; and forming a source and drain feature on at least one side of the gate structure by performing a combination of a dry etching process and a wet etching process.