METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES

摘要

In a plasma process of forming a through electrode, an active face of a wafer processed article having a plurality of via structures is bonded to a front face of a light transmitting carrier by a photolytic bonding member to form a preliminary wafer-carrier coupler in which a back face of the wafer processed article symmetrical to the active face is directed upwardly, and form a wafer-carrier coupler having an optical shielding layer in which the via structures are exposed through the back face, and which covers the wafer processed article, the photolytic bonding member, and the carrier, and which blocks light passing through the carrier. A connector is formed on the back face to contact the via structures, and photolytic light decomposing the photolytic bonding member is irradiated to separate the wafer processed article from the carrier. While the plasma process is performed, differentiation light passes through the carrier to prevent adhesion of the photolytic bonding member from being lost.