发明名称 Molecular organometallic resists for EUV
摘要 Described herein are organometallic or inorganic complexes with high extreme ultraviolet (EUV) optical density (OD) and high mass density for use in thin films. These thin films are used as high resolution, low line edge roughness (LER) EUV photoresists. The complexes may also be included in nanoparticle form for use in photoresists.
申请公布号 US9372402(B2) 申请公布日期 2016.06.21
申请号 US201314026761 申请日期 2013.09.13
申请人 The Research Foundation for the State University of New York 发明人 Freedman Daniel;Marnell Miles;Brainard Robert;Cardineau Brian
分类号 G03F7/004 主分类号 G03F7/004
代理机构 Heslin, Rothenberg, Farley & Mesiti, P.C. 代理人 Heslin, Rothenberg, Farley & Mesiti, P.C.
主权项 1. A photoresist comprising at least one complex (BD2)zM(La)n(Lb)o(Lc)p(Ld)q or (A)yM(Le)n(Lf)o(Lg)p(Lh)q, wherein: M is a metal having a coordination number of Q, wherein M is selected from zirconium, manganese, aluminum, vanadium, titanium, chromium, manganese, iron, cobalt, copper, zinc, gallium, germanium, arsenic, molybdenum, ruthenium, rhodium, silver, cadmium, indium, tin, antimony, tellurium, iodine, thulium, hafnium, tantalum, tungsten, rhenium, osmium, iridium, gold, mercury, thallium, lead, and bismuth; Q is an integer selected from 2, 3, 4, 5, 6, 7, or 8; BD2 is oxalate or carbonate; La, Lb, Lc and Ld are ligands, each having a denticity of, respectively, wa, wb, wc and wd; z is 1, 2 or 3; n, o, p, and q are independently zero, one or two; the sum of (n·wa) plus (o·wb) plus (p·wc) plus (q·wd) is equal to (Q minus 2z); A is selected in each instance from azide and (—NO2); Le, Lf, Lg and Lh are ligands, each having a denticity of, respectively, we, wf, wg and wh; y is any integer up to and including Q; and the sum of (n·we) plus (o·wf) plus (p·wg) plus (q·wh) is equal to (Q minus y); wherein said complex is balanced by a counter ion, if necessary.
地址 Albany unknown