发明名称 Systems and methods for controlling soft bias thickness for tunnel magnetoresistance readers
摘要 Systems and methods for controlling a thickness of a soft bias layer in a tunnel magnetoresistance (TMR) reader are provided. One such method involves providing a magnetoresistive sensor stack including a free layer and a bottom shield layer, performing contiguous junction milling on the sensor stack, depositing an insulating layer on the sensor stack, depositing a spacer layer on the insulating layer, performing an angled milling sub-process to remove preselected portions of the spacer layer, depositing a soft bias layer on the sensor stack, and depositing a top shield layer on the sensor stack and the soft bias layer. The method can further involve adjusting an alignment of a top surface of the spacer layer with respect to the free layer. In one such case, the top surface of the spacer layer is adjusted to be below the free layer.
申请公布号 US9396743(B1) 申请公布日期 2016.07.19
申请号 US201414308366 申请日期 2014.06.18
申请人 Western Digital (Fremont), LLC 发明人 Zheng Yi;Jiang Ming;Roy Anup G.;Li Guanxiong;Mao Ming;Mauri Daniele
分类号 G11B5/39 主分类号 G11B5/39
代理机构 代理人
主权项 1. A tunnel magnetoresistance reader comprising: a magnetoresistive sensor stack comprising a free layer and a bottom shield layer and having angled sides; a soft bias structure adjacent to the sensor stack, wherein the soft bias structure comprises: a portion of the bottom shield layer;an insulating layer on the portion of the bottom shield layer and on the angled sides of the sensor stack;a non-magnetic spacer layer directly on the insulating layer;a soft bias layer directly on the spacer layer; anda top shield layer directly on the soft bias layer; wherein the spacer layer is entirely below the free layer.
地址 Fremont CA US