| 摘要 |
Provided is a manufacturing method for an N-type double-sided battery. The method comprises the following steps: S1, performing texturing treatment; S2, evenly coating a boron source on the upper surface of an N-type silicon wafer in a spin coating or silk-screen printing manner, and conducting boron diffusion in a furnace tube; S3, manufacturing a mask; S4, conducting phosphorus diffusion on the lower surface of the N-type silicon wafer, and forming a high-low-junction structure on the lower surface; S5, removing phosphorosilicate glass and the mask that is manufactured in step S3; S6, manufacturing a passivation anti-reflection film made from aluminum oxide and silicon nitride on the surface of the diffused boron, and manufacturing a silicon nitride passivation anti-reflection film on the surface of the diffused phosphorus; and S7, manufacturing an electrode. The manufacturing method for the N-type double-sided battery is simple in process, and effectively improves the efficiency of the battery. In addition, also provided is an N-type double-sided battery. A passivation layer manufacturing method for the N-type double-sided battery is a low-temperature process, and does not damage a PN junction. |
