DEEP ULTRAVIOLET LED AND METHOD FOR MANUFACTURING SAME

摘要

Provided is a deep ultraviolet LED having a design wavelength of λ, characterized by having, in order starting at the opposite side from the substrate, an Al reflecting electrode layer, an ultrathin film metal layer, and a transparent p-type AlGaN contact layer, and having a photonic crystal periodic structure within a range in the thickness direction of the transparent p-type AlGaN contact layer, the photonic crystal periodic structure having a photonic bandgap.