Circuit and method for detection and compensation of transistor mismatch

摘要

The present disclosure relates to a detection circuit formed as part of an integrated circuit. In one example, the detection circuit includes a signal generator configured to generate a reference signal, and an amplification circuit comprising a p-channel transistor and an n-channel transistor, wherein the amplification circuit is affected by a variability that also affects a functional circuit formed as part of the integrated circuit. The variability causes the p-channel transistor and the n-channel transistor to have different respective drive strengths. The amplification circuit is configured to receive the reference signal and to provide an amplified signal representative of a difference in the respective drive strengths, wherein the reference signal is more insensitive to the variability than the amplified signal. The present disclosure also relates to an integrated circuit and a method for detecting and compensating a transistor mismatch.

主权项

1. A detection circuit formed as part of an integrated circuit, the detection circuit comprising:
a signal generator configured to generate a reference signal; and an amplification circuit comprising a p-channel transistor and an n-channel transistor, the amplification circuit being affected by a variability also affecting a functional circuit formed as part of the integrated circuit, the variability causing the p-channel transistor and the n-channel transistor to have different respective drive strengths, and the amplification circuit being configured to receive the reference signal and to provide an amplified signal representative of a difference in the respective drive strengths, wherein the reference signal is more insensitive to the variability than the amplified signal.