| 摘要 |
Proposed are a non-volatile SRAM memory cell and a non-volatile semiconductor storage device. In a non-volatile semiconductor storage device (1), the voltage required for a program operation for writing SRAM data to a non-volatile memory unit (16) can be lowered, and therefore a gate insulating film of each of a first access transistor (21a), a second access transistor (21b), a first load transistor (22a), a second load transistor (22b), a first drive transistor (23a), and a second drive transistor (23b), which constitute an SRAM (15) connected to the non-volatile memory unit (16), can be formed with a film thickness of not more than 4 [nm]. This enables high speed operation of the SRAM (15) with a lower power supply voltage, whereby the SRAM data of the SRAM (15) can be written to the non-volatile memory unit (16), and high speed operation in the SRAM (15) can be achieved. |
