MAGNETIC RESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY DEVICE, MANUFACTURING METHOD, OPERATION METHOD, AND INTEGRATED CIRCUIT

摘要

A magnetic resistance effect element (100) is provided with: a bias layer (11) containing an antiferromagnetic body, the bias layer (11) being shaped so as to extend in a first direction; a record layer (12) comprising a magnetic body, the record layer (12) being provided adjacent to the bias layer (11); a barrier layer (13) comprising an insulator, the barrier layer (13) being formed on the record layer (12); and a reference layer (14) comprising a ferromagnetic body, the reference layer (14) being formed on the barrier layer (13). The direction of magnetization of the reference layer (14) is substantially fixed, and the direction of magnetization of the record layer (12) is invertible.