Selective deposition of noble metal thin films

摘要

Processes are provided for selectively depositing thin films comprising one or more noble metals on a substrate by vapor deposition processes. In some embodiments, atomic layer deposition (ALD) processes are used to deposit a noble metal containing thin film on a high-k material, metal, metal nitride or other conductive metal compound while avoiding deposition on a lower k insulator such as silicon oxide. The ability to deposit on a first surface, such as a high-k material, while avoiding deposition on a second surface, such as a silicon oxide or silicon nitride surface, may be utilized, for example, in the formation of a gate electrode.

主权项

1. A method for selectively depositing a thin film comprising one or more noble metals on a substrate comprising a first surface and a second surface in a reaction space, the method comprising:
contacting the first and second surface of the substrate with a gaseous noble metal precursor; contacting the first and second surface of the substrate with a second gaseous reactant; and repeating until a thin film of a desired thickness is obtained selectively on the first surface relative to the second surface, wherein the first surface comprises a material selected from the group consisting of high-k materials, metals, metal nitrides, metal carbides, metal borides, conductive oxides and mixtures thereof; and wherein the second surface comprises a material selected from the group consisting of silicon oxides, silicon nitrides, silicon oxynitrides, fluorinated silica glass (FSG), carbon doped silicon oxide (SiOC) and materials containing more than about 50% silicon oxide and wherein the temperature is below about 400° C.