发明名称 |
IN-SITU ETCH RATE DETERMINATION FOR CHAMBER CLEAN ENDPOINT |
摘要 |
Embodiments described herein relate to methods for determining a cleaning endpoint. A first plasma cleaning process may be performed in a clean chamber environment to determine a clean time function defined by a first slope. A second plasma cleaning process may be performed in an unclean chamber environment to determine a clean time function defined by a second slope. The first and second slope may be compared to determine a clean endpoint time. |
申请公布号 |
WO2016171845(A1) |
申请公布日期 |
2016.10.27 |
申请号 |
WO2016US24475 |
申请日期 |
2016.03.28 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
BHATIA, Sidharth;PATEL, Anjana M.;KHAJA, Abdul Aziz |
分类号 |
H01J37/36;H01J37/16;H01J37/34 |
主分类号 |
H01J37/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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