发明名称 |
Method for fabricating nanowires for horizontal gate all around devices for semiconductor applications |
摘要 |
The present disclosure provide methods for forming nanowire structures with desired materials horizontal gate-all-around (hGAA) structures field effect transistor (FET) for semiconductor chips. In one example, a method of forming nanowire structures on a substrate includes supplying an oxygen containing gas mixture to a multi-material layer on a substrate in a processing chamber, wherein the multi-material layer includes repeating pairs of a first layer and a second layer, the first and the second layers having a first group and a second group of sidewalls respectively exposed through openings defined in the multi-material layer, and selectively forming an oxidation layer on the second group of sidewalls in the second layer. |
申请公布号 |
US9484406(B1) |
申请公布日期 |
2016.11.01 |
申请号 |
US201514874146 |
申请日期 |
2015.10.02 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
Sun Shiyu;Yoshida Naomi;Wood Bingxi |
分类号 |
H01L29/423;H01L29/06;H01L21/02;H01L29/165;H01L29/41 |
主分类号 |
H01L29/423 |
代理机构 |
Patterson & Sheridan, LLP |
代理人 |
Patterson & Sheridan, LLP |
主权项 |
1. A method of forming nanowire structures on a substrate comprising:
supplying an oxygen containing gas mixture to a multi-material layer on a substrate in a processing chamber, wherein the multi-material layer includes repeating pairs of a first layer and a second layer, the first and the second layers having a first group and a second group of sidewalls respectively exposed through openings defined in the multi-material layer; selectively forming an oxidation layer on the second group of sidewalls in the second layer; and forming horizontal gate-all-around (hGAA) structures using the openings defined in the multi-material layer. |
地址 |
Santa Clara CA US |