发明名称 |
Method for the elimination of metal voids in metal lines of a semiconductor device. |
摘要 |
<p>A method for minimizing metal voids in the metal lines during the manufacture of an semiconductor integrated circuit is described that has significant advantages over previously known methods. The method provides for the use of a nonreactive protective film that is wrapped around the metal lines to prevent the voids. In so doing, the reliability and strength of the electrical connections are significantly improved.</p> |
申请公布号 |
EP0596592(A2) |
申请公布日期 |
1994.05.11 |
申请号 |
EP19930306235 |
申请日期 |
1993.08.06 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
TSIANG, JERRY H.;PENG, YENG-KAUNG;SHIAU, YING;MA, ANN |
分类号 |
H01L21/3205;H01L21/768;H01L23/52;H01L23/532;(IPC1-7):H01L21/90;H01L21/320 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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