| 摘要 |
PURPOSE:To prevent the reverse flow of air from an excavation system, by installing an excavation means using a turbo-molecular pump in a reaction chamber and installing an exhaust means using a cryopump in a buffer chamber. CONSTITUTION:In order to form a P-type semiconductor layer in a first reaction vessel 101 of a system I, the degree of vacuum of the reaction system I (containing the reaction vessel 101) is set to be, e.g. 0.1Torr, by controlling a pressure regulation valve 72 of a turbo-molecular pump (TP) 87. Reactive gas is supplied to the vessel 101 from a doping system 50 of the system I, and plasma is generated by supplying high frequency energy 14. By opening a gate 45, a substrate on which a first semiconductor layer is formed is moved to a buffer chamber 102, and then the gate 45 is closed. The buffer chamber 102 is previously evacuated at 10<-8>Torr or lower with a cryopump 88. Then the substrate is moved to a reaction vessel 103 of a system III through a gate 46. The pressure inside the reaction vessel 103 is kept lower than or equal to 3X10<-8>Torr by a TP 89. |
