发明名称 |
Method for producing a wafer with a monocrystalline silicon carbide layer |
摘要 |
To produce a large-surface wafer, a monocrystalline SiC layer (4) is grown epitaxially on a monocrystalline Si layer (1) provided with a nucleation layer (3) by carbonization. On the monocrystalline SiC layer (4), a polycrystalline SiC layer (5) is deposited. The Si layer is then etched away, resulting in a wafer consisting of a compound of monocrystalline and polycrystalline SiC layers (4, 5) and meeting the highest demands of semiconductor technology.
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申请公布号 |
US5471946(A) |
申请公布日期 |
1995.12.05 |
申请号 |
US19930136115 |
申请日期 |
1993.10.13 |
申请人 |
CS HALBLEITER-UND SOLARTECHNOLOGIE GMBH |
发明人 |
SCHOLZ, CHRISTOPH;KOEHL, FRANZ;WEBER, THOMAS |
分类号 |
C30B25/02;C30B29/36;H01L21/205;H01L21/36;(IPC1-7):C30B25/16 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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