SEMICONDUCTOR COMPONENTS WITH GATE DIELECTRIC LAYER HAVING RESPECTIVELY DIFFERENT NITROGEN DENSITY AND METHOD OF MAKING THE SAME

摘要

PURPOSE: NMOS transistor and PMOS transistor comprising CMOS transistor secure reliability of each gate insulating film and each NMOS transistor and PMOS transistor supply optimal working condition. CONSTITUTION: It comprises a transistor forming the second electric conducting channel in the first electric conducting area, a semiconductor substrate with a transistor forming the first electric conducting channel in the second electric conducting area, the first gate insulating film that is formed on the surface of the first electric conducting area and formed with an oxide film containing the first nitrogen density and the second gate insulating film that is formed with an oxide film having the second nitrogen density that is thinner than the first nitrogen density in the surface of the second electric conducting area.