发明名称 Method to fabricate poly tip in split-gate flash
摘要 A method is provided to form a sharp poly tip to improve the speed of a split-gate flash memory. The sharp poly tip is provided in place of the conventional gate bird's beak (GBB) because the latter requires the forming of thick poly-oxide which is more and more difficult in the miniaturized circuits of the ultra scale integrated technology. Furthermore, it is well known that GBB encroaches under the gate edge in a split-gate flash and degrades the programmability of submicron memory cells. The sharp poly tip of the invention is provided by forming a tapered floating gate through a high pressure etch such that the tip of the upper edge of the floating gate under the poly oxide is sharper and more robust, and, therefore, less susceptible to damage during the manufacture of the cell. The invention is also directed to a semiconductor device fabricated by the disclosed method.
申请公布号 US6165845(A) 申请公布日期 2000.12.26
申请号 US19990298931 申请日期 1999.04.26
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY 发明人 HSIEH, CHIA-TA;LIN, YAI-FEN;SUNG, HUNG-CHENG;YEH, JACK;KUO, DI-SON
分类号 H01L21/28;H01L21/336;H01L29/423;(IPC1-7):H01L21/336 主分类号 H01L21/28
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