Thin film magnetic memory device capable of easily controlling a data write current

摘要

Folded bit line pairs are provided corresponding to the respective MTJ (Magnetic Tunnel Junction) memory cell columns. Two bit lines forming each bit line pair are respectively coupled through a corresponding column selection gate to two data lines forming a data I/O line pair DI/OP. In the data write operation, an equalizing transistor provided corresponding to the respective bit line is turned ON to short-circuit the two bit lines. A data write current control circuit sets one of the two data lines to one of a high potential state and a low potential state as well as sets the other data line to the other potential state, whereby the direction of a data write current flowing though the bit line pair as reciprocating current can be easily controlled according to the write data level.