发明名称 Static electricity chuck apparatus and semiconductor producing apparatus provided with the static electricity chuck apparatus
摘要 Insulative viscous fluid or gel material having low hardness is used for at least a first electricity insulating layer as an insulating layer of a static electricity chuck. Since a holding surface of the first electricity insulating layer is deformed in accordance with a back surface shape of a wafer, a substantially entire surface of the holding surface comes into intimate contact with the wafer uniformly. An exposing surface of the electricity insulating layer may be coated with a second electricity insulating layer having corrosion resistance. With this structure, adhesion between the back surface of the wafer and the static electricity chuck apparatus is enhanced, which reduces the contact thermal resistance, and it is possible to obtain a static electricity chuck apparatus which is capable of controlling temperature of a surface of the wafer with high precision and has high plasma resistance and durability.
申请公布号 US2002167781(A1) 申请公布日期 2002.11.14
申请号 US20020121557 申请日期 2002.04.12
申请人 MATSUKI TERUYUKI;SUGIHARA MOTOHIDE;KADOTANI KANICHI 发明人 MATSUKI TERUYUKI;SUGIHARA MOTOHIDE;KADOTANI KANICHI
分类号 H01L21/00;(IPC1-7):H01H1/00 主分类号 H01L21/00
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