Semiconductor memory device using tapered arrangement of local input and output sense amplifiers

摘要

A semiconductor memory device optimizes current consumption by using proper sub-bank arrangement and at least two different kinds of LIO sense amplifiers having different driving capabilities. The driving capabilities of the LIO sense amplifiers are controlled in a tapered manner depending on whether a corresponding sub-bank of the LIO sense amplifier is arranged nearer to, or farther away from, its corresponding GIO sense amplifier. In other words, the farther that a sub-bank of an LIO sense amplifier is away from its corresponding GIO sense amplifier, the greater its driving capability.