METHOD OF MANUFACTURING FLASH MEMORY DEVICE

摘要

The present invention discloses a method of manufacturing a flash memory device comprising the steps of forming a first insulating layer and a first conductive layer on a semiconductor substrate; etching the first conductive layer, the first insulating layer and the semiconductor substrate to form a trench; forming an isolation layer on a region on which the trench is formed; forming a second conductive layer to make the second conductive layer contact with the first conductive layer; and removing the second conductive layer formed on the isolation layer.