发明名称 |
PHASE CHANGE MEMORY DEVICE WITH REFERENCE CELL ARRAY |
摘要 |
A phase change memory device includes a plurality of bit lines and a reference bit line intersecting a plurality of word lines. A cell array block has a phase change resistance cell arranged where a word line and a bit line intersect. A reference cell array block is configured to output a reference current and is formed where the word line and a reference bit line intersect. A column selecting unit is configured to select a corresponding bit line connected to the cell array block. A reference column selecting unit is connected to the reference cell array block and is configured to select the reference bit line. A sense amplifier is connected to the column selecting unit and the reference column selecting unit and is configured to receive the reference current and a cell data current of the bit line.
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申请公布号 |
US2009027952(A1) |
申请公布日期 |
2009.01.29 |
申请号 |
US20080133529 |
申请日期 |
2008.06.05 |
申请人 |
KANG HEE BOK;HONG SUK KYOUNG |
发明人 |
KANG HEE BOK;HONG SUK KYOUNG |
分类号 |
G11C11/00;G11C7/02 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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