发明名称 NITRIDE SEMICONDUCTOR ELEMENT AND ITS MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a nitride semiconductor element, which improves reliability and the like of the element by reducing an amount of extraneous matter generated on a substrate surface by laser machining. <P>SOLUTION: A wafer 5 is scanned by a laser light 9 along a predetermined line for cutting 7. The laser light 9 is collected on the wafer 5 on a position where the laser light 9 scans. This causes multiphoton absorption, to form a partitioning guide slot 31. Then, the material of the wafer 5 sprays around the periphery in the form of debris and adheres to the surface of the wafer 5. Next, the surface of the wafer 5 is scanned by the laser light 9 with a low energy density along the predetermined line for cutting 7. The debris on the surface of the wafer 5 absorbs the laser light 9, is sublimated, and is removed from the surface of the wafer 5. After that, the wafer 5 is partitioned along the partitioning guide slot 31. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009049390(A) 申请公布日期 2009.03.05
申请号 JP20080187458 申请日期 2008.07.18
申请人 ROHM CO LTD 发明人 KODA SHINICHI
分类号 H01S5/323;B23K26/00;B23K26/16;H01L21/301;H01S5/02 主分类号 H01S5/323
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