| 摘要 |
A pixel structure and a manufacturing method thereof is provided, the pixel structure including a thin film transistor (TFT), a pixel electrode, a common line, a first dielectric layer and a second dielectric layer. Both of the TFT and the pixel electrode are disposed on the substrate and electrically coupled to each other. The common line is disposed on the substrate under the pixel electrode, while the first dielectric layer is extended from the TFT to under the pixel electrode to cover the common line. The second dielectric layer covers the TFT and is extended from the TFT to under the pixel electrode. The pixel electrode and the common line form a storage capacitor, and the shortest distance between the pixel electrode and the common line is smaller than the sum of the thickness of the first dielectric layer and the thickness of the second dielectric layer in the TFT.
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