发明名称 |
PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD |
摘要 |
The invention provides a method and apparatus for performing plasma etching to form a gate electrode on a large-scale substrate while ensuring the in-plane uniformity of the CD shift of the gate electrode. The present invention measures a radical density distribution of plasma in the processing chamber, feeds processing gases into the processing chamber through multiple locations and controls either the flow rates or compositions of the respective processing gases or the in-plane temperature distribution of a stage on which the substrate is placed, or feeds processing gases into the processing chamber through multiple locations and controls both the flow rates or compositions of the processing gases and the in-plane temperature distribution of the stage on which the substrate is placed.
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申请公布号 |
US2009152241(A1) |
申请公布日期 |
2009.06.18 |
申请号 |
US20090390231 |
申请日期 |
2009.02.20 |
申请人 |
MIYA GO;TANAKA JUNICHI;KANNO SEIICHIRO;ITABASHI NAOSHI;AKIYAMA HIROSHI;SATOU KOUHEI |
发明人 |
MIYA GO;TANAKA JUNICHI;KANNO SEIICHIRO;ITABASHI NAOSHI;AKIYAMA HIROSHI;SATOU KOUHEI |
分类号 |
H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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