发明名称 |
Nonvolatile memory device, storage device having the same, and operation and read methods thereof |
摘要 |
A method is for operating a nonvolatile memory device, the nonvolatile memory device including at least one string connected to a bit line, the at least one string including a plurality of memory cells connected in series, each of the plurality of memory cells being connected to a respective word line among a plurality of word lines and stacked in a direction perpendicular to a substrate. The method includes applying a word line voltage needed for an operation to a first word line among the word lines, applying a recovery voltage higher than a ground voltage to the first word line after the operation, and then floating the first word line. |
申请公布号 |
US9349471(B2) |
申请公布日期 |
2016.05.24 |
申请号 |
US201514670879 |
申请日期 |
2015.03.27 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Yun Sung-Won |
分类号 |
G11C11/34;G11C16/26;G11C16/04;G11C16/24 |
主分类号 |
G11C11/34 |
代理机构 |
Volentine & Whitt, PLLC |
代理人 |
Volentine & Whitt, PLLC |
主权项 |
1. A method of operating a nonvolatile memory device which includes at least one string connected to a bit line, the at least one string including a plurality of memory cells connected in series, each of the plurality of memory cells being connected to a respective word line among a plurality of word lines and stacked in a direction perpendicular to a substrate, the method comprising:
applying a word line voltage needed for an operation to a first word line among the word lines; applying a recovery voltage higher than a ground voltage to the first word line after the operation; and then floating the first word line at the recovery voltage. |
地址 |
Suwon-si, Gyeonggi-do KR |