| 摘要 |
The present invention relates to a semiconductor light emitting device and, more specifically, to a semiconductor light emitting device increasing light emitting efficiency through uniform current dispersion for the whole area of a light emitting structure. The semiconductor light emitting device includes the light emitting structure in which a conductive substrate, a second conductivity type semiconductor layer, an active layer, and a first conductivity type semiconductor layer are stacked. A dispersion metal layer and an insulation layer are formed between the conductive substrate and the second conductivity type semiconductor layer; a reflection electrode layer is formed in the lower portion of the second conductivity type semiconductor layer; a plurality of hole-type electrodes are extended up to the inside of the first conductivity type semiconductor layer; the dispersion metal layer and the first conductivity type semiconductor layer are electrically connected; and an electrode pad is individually formed on both edge areas of one side of the light emitting structure. The semiconductor light emitting device includes a first line-shaped electrode formed along the side. |
