| 发明名称 | Light emitting device | ||
| 摘要 | A light-emitting device is disclosed, comprising a substrate; a light-emitting structure on the substrate comprising a first region and a second region; a barrier layer on the first region having a bottom surface and a sidewall, wherein an angle between the sidewall and the bottom surface is between 10°70°; and a transparent conductive layer formed on the light-emitting structure and the barrier layer; wherein a difference between a thickness of the transparent conductive layer at the sidewall on the barrier layer and a thickness of the transparent conductive layer on the second region of the light-emitting structure forms a ratio not larger than 10 %. | ||
| 申请公布号 | US9425362(B2) | 申请公布日期 | 2016.08.23 |
| 申请号 | US201314098643 | 申请日期 | 2013.12.06 |
| 申请人 | EPISTAR CORPORATION | 发明人 | Wu Jar-Yu;Su Ching-Jang;Tseng Chun-Lung;Shen Ching-Hsing |
| 分类号 | H01L21/00;H01L29/201;H01L33/00;H01L33/42;H01L33/38;H01L33/44 | 主分类号 | H01L21/00 |
| 代理机构 | Ditthavong & Steiner, P.C. | 代理人 | Ditthavong & Steiner, P.C. |
| 主权项 | 1. A light-emitting device, comprising: a substrate; a light-emitting structure on the substrate comprising a first region and a second region; a barrier layer on the first region having a bottom surface and a sidewall; and a transparent conductive layer formed on the light-emitting structure and the barrier layer; wherein an angle between the sidewall and the bottom surface is between 10°-70°; wherein the transparent conductive layer is formed between the sidewall of the barrier layer and the second region of the light-emitting structure, wherein a difference between a thickness of the transparent conductive layer at the sidewall on the barrier layer and a thickness of the transparent conductive layer on the second region of the light-emitting structure forms a ratio not larger than 10%. | ||
| 地址 | Hsinchu TW | ||