Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions

摘要

An electrical device in which an interface layer comprising arsenic is disposed between and in contact with a conductor and a semiconductor. In some cases, the interface layer may be a monolayer of arsenic.

主权项

1. An electrical junction, comprising an interface layer disposed between and in contact with a conductor and a semiconductor, the interface layer comprising arsenic and configured to reduce a height of a Schottky barrier between the conductor and the semiconductor from that which would exist at a junction between the conductor and the semiconductor without the interface layer disposed therebetween, and wherein the electrical junction has a specific contact resistance of less than or equal to approximately 100 Ω-μm2.