Integrated floating diode structure and method therefor

摘要

In one embodiment, a floating diode structure includes a p-type semiconductor substrate. An n-type doped region is disposed between the semiconductor substrate and a p-type doped region of the first conductivity type adjacent the first doped region. An n-type cathode region is disposed within the p-type doped region and a p-type anode region is disposed within the cathode region. An anode electrode is connected to the anode region and a cathode electrode is connected to the cathode region. In one embodiment, the cathode electrode is further connected to the p-type doped region. The n-type doped region is configured as a floating region that facilitates the diode operating in both a forward and reverse bias mode and both below ground and above ground with respect to the p-type semiconductor substrate.

主权项

1. A semiconductor device comprising:
a semiconductor substrate of a first conductivity type; a first doped region of a second conductivity type opposite to the first conductivity type on the semiconductor substrate; a second doped region of the first conductivity type adjacent the first doped region; a cathode region of the second conductivity type within the second doped region; an anode region of the first conductivity type within the cathode region; a first electrode electrically coupled to the anode region; and a second electrode electrically coupled to the cathode region and the second doped region, wherein the first doped region is configured as a floating region.