| 摘要 |
This pattern forming method involves a step a for forming a resist film by coating an actinic ray-sensitive or radiation-sensitive resin composition onto a substrate, a step b for forming an upper layer film on the resist film using an upper layer film forming composition, a step c for exposing the resist film on which the upper layer film was formed, and a step d for forming a pattern by developing the exposed resist film using a developing solution that contains an organic solvent. The upper layer film forming composition contains a resin having a repeating unit (a) with a ClogP value of 2.85 or greater and a compound (b) having a ClogP of 1.30 or less, and the receding contact angle relative to water on the upper layer film is 70° or greater. This resist pattern is formed by the aforementioned pattern forming method, this electronic device manufacturing method includes the aforementioned pattern forming method, and, by means of the aforementioned upper layer film forming composition, it is possible to simultaneously achieve a high degree of DOF, EL and watermark defect performance. |
