Method of producing nitride-based semiconductor device, and light-emitting device produced thereby

摘要

A method of producing a nitride-based semiconductor device includes the steps of growing an InxAlyGa1-x-yN (0<=x, 0<=y, x+y<1) buffer layer (2; 12; 22; 32; 42) on a substrate (1; 11; 21; 31; 41) at a first substrate temperature, and growing a first conductivity type nitride-based semiconductor layer (4; 14; 24; 34; 44) on the buffer layer at a second substrate temperature. The first temperature is higher than the second temperature.