| 摘要 |
PROBLEM TO BE SOLVED: To enable manufacturing of a semiconductor device having high adhesion.SOLUTION: A semiconductor device manufacturing method comprises the steps of: (i) laminating a first layer formed by at least one of a group consisting of titanium, titanium nitride and vanadium so as to cover a part of a semiconductor layer; (ii) laminating an aluminum layer consisting primarily of aluminum on the side opposite to the semiconductor layer across the first layer; (iii) oxidizing the aluminum layer; (iv) laminating a titanium layer formed by titanium on the side opposite to the aluminum layer across the first layer; (v)laminating a titanium nitride layer formed by titanium nitride on the side opposite to the aluminum layer across the titanium layer; and (vi) laminating an electrode layer on the side opposite to the titanium layer across the titanium nitride layer. |
