发明名称 POWER CONVERSION DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a modular multi-level power conversion device, which uses a pressure-welding type semiconductor devices of an element parallel structure, with a suppressed cubic volume.SOLUTION: A plurality of IGBT stacks having a plurality of pressure-welding type semiconductor devices, metal plates and dielectric plates which are integrally pressure-welded are disposed in parallel in flush. By the electric connection of the pressure-welding type semiconductor devices constituting between the different IGBT stacks, a plurality of unit power converters having pressure-welding type semiconductor devices in parallel connection are configured. Further, by the cascade connection of each unit power converter, a plurality of unit power converters of the modular multi-level power conversion devices are configured in the plurality of IGBT stacks.SELECTED DRAWING: Figure 5
申请公布号 JP2016208706(A) 申请公布日期 2016.12.08
申请号 JP20150088886 申请日期 2015.04.24
申请人 HITACHI LTD 发明人 OHARA SHINYA;KATO SHUJI;INOUE SHIGENORI
分类号 H02M7/48;H02M7/483 主分类号 H02M7/48
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