| 发明名称 |
Method of making a storage electrode of DRAM cell |
| 摘要 |
A storage electrode of a DRAM cell in a highly-integrated semiconductor device has, in order to secure the surface area thereof greater than that of a conventional tunnel-type storage electrode, an upper plate of storage electrode formed over a lower plate of storage electrode separated therefrom by a predetermined distance, while interposing bars of various shapes formed of a conductive layer to electrically connect the upper and lower plates, and a method for manufacturing the storage electrode is also provided.
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| 申请公布号 |
US5405799(A) |
申请公布日期 |
1995.04.11 |
| 申请号 |
US19930138204 |
申请日期 |
1993.10.20 |
| 申请人 |
HYUNDAI ELECTRONICS INDUSTRIES, CO., INC. |
发明人 |
WOO, SANG H.;JEON, HA E.;PARK, YOUNG J. |
| 分类号 |
H01L21/28;H01L21/033;H01L21/306;H01L21/822;H01L21/8242;H01L27/04;H01L27/10;H01L27/108;(IPC1-7):H01L21/70 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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