发明名称 |
Induction plasma source |
摘要 |
An induction plasma source for integrated circuit fabrication includes a hemispherically shaped induction coil in an expanding spiral pattern about the vacuum chamber containing a semiconductor wafer supported by a platen. The windings of the induction coil follow the contour of a hemispherically shaped quartz bell jar, which holds the vacuum. The power source is a low frequency rf source having a frequency of about 450 KHz and a power in the range of 200-2000 watts, and the pressure is a low pressure of about 0.1-100 mTorr. A high frequency rf source independently adjusts the bias voltage on the wafer.
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申请公布号 |
US5405480(A) |
申请公布日期 |
1995.04.11 |
申请号 |
US19940273574 |
申请日期 |
1994.07.11 |
申请人 |
NOVELLUS SYSTEMS, INC. |
发明人 |
BENZING, JEFFREY C.;BROADBENT, ELIOT K.;ROUGH, J. KIRKWOOD H. |
分类号 |
C23F4/00;H01J37/32;H01L21/205;H01L21/302;H01L21/3065;H05H1/46;(IPC1-7):H01L21/00 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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