发明名称 |
Thin film capacitor and method of manufacturing the same |
摘要 |
A NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal electrode are sequentially laminated on a metal electrode, thus providing a thin film capacitor. Or alternatively, a thin film capacitor is manufactured by sequentially laminating a NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a platinum thin layer as a lower electrode oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal thin layer as an upper electrode on a substrate. A plasma-enhanced CVD method is applied to form a NaCl oxide thin layer, a spinel oxide thin layer and a perovskite dielectric thin layer while a vacuum deposition method, a sputtering method, a CVD method or a plasma-enhanced CVD method is applied for the formation of a metal electrode.
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申请公布号 |
US5406445(A) |
申请公布日期 |
1995.04.11 |
申请号 |
US19940216966 |
申请日期 |
1994.03.24 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
FUJII, EIJI;TOMOZAWA, ATSUSHI;TORII, HIDEO;HATTORI, MASUMI;TAKAYAMA, RYOICHI;FUJII, SATORU |
分类号 |
H01G4/20;(IPC1-7):H01L29/04;H01L23/48 |
主分类号 |
H01G4/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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