| 发明名称 |
P-channel mos gated device with base implant through the contact window and process for manufacture thereof |
| 摘要 |
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| 申请公布号 |
GB9724413(D0) |
申请公布日期 |
1998.01.14 |
| 申请号 |
GB19970024413 |
申请日期 |
1997.11.18 |
| 申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
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| 分类号 |
H01L21/302;H01L21/223;H01L21/3065;H01L21/331;H01L21/332;H01L21/336;H01L29/10;H01L29/739;H01L29/745;H01L29/749;H01L29/78 |
主分类号 |
H01L21/302 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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