METHOD FOR CONTROLLING ION IMPLANTATION AMOUNT

摘要

PURPOSE: A method for controlling ion implantation amount is provided to make the device characteristics uniform over the whole wafer after implanting an ion onto the whole area of a wafer. CONSTITUTION: A method of controlling ion implantation amount make the characteristics according to the ion implantation be realized uniformly over all the area of a wafer. The method makes the device characteristics uniform over the whole area of the wafer by accelerating/decelerating the scan rate of an ion beam implanting ion onto the wafer. The ion implantation amount is controlled through a wafer fixing plate fixing the wafer, a wafer fixing plate rotating unit rotating the wafer fixing unit and a wafer fixing plate displacement generating unit generating displacement on the wafer fixing plate rotating unit.