发明名称 |
Field effect transistor and method of fabrication |
摘要 |
An Insulated Gate Field Effect Transistor (IGFET), fabricated using Shallow Trench Isolation (STI), has an edge of a channel region of the IGFET which has a curved shape with a controlled radius of curvature so as to reduce the electric field at the edge of the channel region. A method of controlling the shape of the edge of the channel region is to limit the supply of oxygen to the region at the edge of the channel region during the oxidation process when the side walls of the silicon island, in which the transistor will be formed, are initially covered with a layer of silicon oxide.
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申请公布号 |
US2002094618(A1) |
申请公布日期 |
2002.07.18 |
申请号 |
US20020066206 |
申请日期 |
2002.01.31 |
申请人 |
THWAITE PETER;BEINTNER JOCHEN |
发明人 |
THWAITE PETER;BEINTNER JOCHEN |
分类号 |
H01L21/762;H01L29/10;(IPC1-7):H01L21/338 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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