Partially-overlapped interconnect structure and method of making

摘要

The present invention is concerned with an interconnect structure for providing electrical communication between an interconnect and a contact in a semiconductor device which includes a contact formed of aluminum or aluminum-copper, an aluminum-copper alloy film which is capable of substantially preventing the contact from being etched by an etchant and which covers substantially the contact, and an interconnect line formed of aluminum or aluminum-copper which at least partially covers the aluminum-copper film sufficient to provide electrical communication between the interconnect line and the contact. The present invention also provides a method for fabricating such interconnect structure.