发明名称 |
DECOUPLED COMPLEMENTARY MASK PATTERNING TRANSFER METHOD |
摘要 |
A patterning method allows for separate transfer of a complementary reticle set. In one embodiment, for example, the method includes etching a phase shift mask (PSM) [112], then etching a cut mask for a cPSM mask (110). Moreover, a decoupled complementary mask patterning transfer method includes two separate and decoupled mask patterning steps which form combined patterns through the use of partial image transfers into an intermediate hard mask (112) prior to final wafer patterning. The intermediate (112) and final hard mask (110) materials are chosen to prevent image transfer into an underlying substrate (102) or wafer prior to the final etch process. |
申请公布号 |
WO2005117089(A3) |
申请公布日期 |
2006.06.15 |
申请号 |
WO2005US13077 |
申请日期 |
2005.04.18 |
申请人 |
FREESCALE SEMICONDUCTOR, INC.;STEPHENS, TAB A.;FU, CHONG-CHENG;KING, CHARLES F. |
发明人 |
STEPHENS, TAB A.;FU, CHONG-CHENG;KING, CHARLES F. |
分类号 |
H01L21/302;H01L21/28;H01L21/3205;H01L21/3213;H01L21/331;H01L21/461;H01L21/4763;H01L21/8222;H01L21/8242 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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